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2SK1484

Part Number 2SK1484
Manufacturer NEC
Title N-CHANNEL MOS FET
Description ...
Features ...

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Datasheet 2SK1484 PDF File







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2SK1482 : .

2SK1482 : The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays. FEATURES • Low on-state resistance RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A) • Voltage drive at logic level (VGS = 4 V) is possible. • Bidirectional zener diode for protection is incorporated in between the gate and the source. • Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and.

2SK1483 : .

2SK1483 : SMD Type MOSFET MOS Field Effect Transistor 2SK1483 Features Can be driven directly an IC operating with a 5V single power supply. Low ON-state resistance RDS(on)=0.8 MAX. At VGS=4V,ID=0.5A RDS(on)=0.4 MAX. At VGS=10V,ID=0.5A SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 30 20 2.0 4.0 2.0 150 -55 to +150 Electri.

2SK1483C : The 2SK1483C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features  Directly driven by a 2.5 V power source.  Low on-state resistance RDS(on)1 = 63 m  MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 65 m MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 91 m MAX. (VGS = 2.5 V, ID = 2.0 A) Ordering Information Part Number Lead Plating Packing Package 2SK1483C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Reel SC-62 (3p PoMM) Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XC Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (.

2SK1485 : The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES • Directly driven by ICs having a 5 V power source. • Low on-state resistance RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A) RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A) • Complementary to 2SJ199. PACKAGE DRAWING (Unit : mm) 4.5 ± 0.1 1.6 ± 0.2 1.5 ± 0.1 0.8 MIN. 2.5 ± 0.1 4.0 ± 0.25 123 0.42 ±0.06 1.5 0.42 0.47 ±0.06 ±0.06 3.0 0.41+–00..0053 1.Source 2.Drain 3.Gate MARK .

2SK1485 : The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES • Directly driven by ICs having a 5 V power source. • Low on-state resistance RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A) RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A) • Complementary to 2SJ199. PACKAGE DRAWING (Unit : mm) 4.5 ± 0.1 1.6 ± 0.2 1.5 ± 0.1 0.8 MIN. 2.5 ± 0.1 4.0 ± 0.25 123 0.42 ±0.06 1.5 0.42 0.47 ±0.06 ±0.06 3.0 0.41+–00..0053 1.Source 2.Drain 3.Gate MARK .

2SK1486 : 2SK1486 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII.5) 2SK1486 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.08 Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current : IDSS = 300 μA (max) (VDS = 300 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VDGR .

2SK1486 : ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage- : VDSS=300 (Min) APPLICATIONS ·High speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNI T 300 V ±30 V 32 A 200 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 0.625 ℃/W Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INC.

2SK1487 : .

2SK1487 : ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 15 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS.

2SK1488 : ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal R.

2SK1488 : ( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com .

2SK1489 : 2SK1489 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1489 Chopper Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0.8 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 1000 10.




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