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2SK1958 Datasheet PDF


Part Number 2SK1958
Manufacturer NEC
Title N-Channel MOSFET
Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because...
Features
• Gate can be driven by 1.5 V
• Because of its high input impedance, there’s no need to consider drive current components required can be reduced
• Since bias resistance can be omitted, the number of G S +0.1 +0.1 0.3 Marking 0.15
  –0.05 0.9 ±0.1 0 to 0.1 Marking: G21 EQUIVALENT CURCUIT Drain ...

File Size 60.63KB
Datasheet 2SK1958 PDF File








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2SK1957 : 2SK1957 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1957 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 200 ±20 7 28 7 30 150 –55 to +150 Unit .

2SK1959 : DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1959 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1959 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DIMENSIONS (in mm) 4.5 ±0.1 1.6 ±0.2 1.5 ±0.1 • Gate can be driven by 1.5 V • Low ON resistance RDS(on) = 3.2 Ω MAX. RDS(on) = 0.5 Ω MAX. @ VGS = 1.5 V, ID = 50 mA @ VGS = 4.0 V, ID = 1.0 A 0.8 MIN. FEATURES S 0.42 ±0.06 1.5 D G 0.42 ±0.06 0.47 ±0.06 3.0 0.41 +0.03 –0.05 Marking: NQ EQUIVALENT CURCUIT Drain (D) Gate (G) Gat.




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