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2SK2072-01L


Part Number 2SK2072-01L
Manufacturer Fuji Electric
Title N-channel MOS-FET
Description 2SK2072-01L,S FAP-IIA Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V G...
Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 800V 2,1Ω 6A 80W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings an...

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2SK2072-01S : 2SK2072-01L,S FAP-IIA Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 800V 2,1Ω 6A 80W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 800 800 6 24 ±30 80 150 -55 ~ +150 U.

2SK2070 : DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2070 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2070 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters. PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 2.0 FEATURES • New package intermediate between small-signal and power models • Can be directly driven by output of 5-V IC • Low ON resistance RDS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A 0.8 ±0.1 3.0 MAX. 0.6 ±0.1 .

2SK2071-01L : ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±30 V 2 A 6 A 20 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 6.25 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2071-01L ELECTRICAL CHARACTERISTI.

2SK2071-01L : 2SK2071-01L,S FAP-IIA Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 6,5Ω 2A 20W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 600 600 2 6 ±30 20 150 -55 ~ +150 Un.

2SK2071-01S : 2SK2071-01L,S FAP-IIA Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 6,5Ω 2A 20W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 600 600 2 6 ±30 20 150 -55 ~ +150 Un.

2SK2072-01S : 2SK2072-01L,S FAP-IIA Series Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 800V 2,1Ω 6A 80W Outline Drawing Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 800 800 6 24 ±30 80 150 -55 ~ +150 U.

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