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2SK3272-01L


Part Number 2SK3272-01L
Manufacturer Fuji Electric
Title N-Channel MOSFET
Description 2SK3272-01L,S Trench Gate MOSFET Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS...
Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 6,5mΩ ±80A 135W Outline Drawing Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC...

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Similar Ai Datasheet

2SK3272-01S : 2SK3272-01L,S Trench Gate MOSFET Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 6,5mΩ ±80A 135W Outline Drawing Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) VGS E AV PD T ch T stg Rating 60 ±80 ±320 +30 / -20 613 135 150 -55 ~ +150 * L=0,13mH, VCC=24V Equivalent Circuit .

2SK3272-01SJ : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse 320 A PD Total Dissipation @TC=25℃ 135 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.93 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL.




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