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2SK359


Part Number 2SK359
Manufacturer Hitachi Semiconductor
Title N-Channel MOSFET
Description 2SK359 Silicon N-Channel MOS FET Application VHF amplifier Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK359 Absolute Maximum Ratings ...
Features = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VGS(off) y fs Ciss Coss Crss PG NF VDS = 10 V, VGS = 0, f = 100 MHz 1. The 2SK359 is grouped by I DSS as follows. 2 2SK359 Maximum Channel Dissipation Curve Channel Power Dissipation Pch (mW) 600 Typical Output Characteristics 10 VGS = 0 V Drain C...

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2SK351 : OEM: Hitachi MOSFET Transistor 2SK351 / K351 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability OEM: Hitachi MOSFET Transistor 2SK351 / K351 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability OEM: Hitachi MOSFET Transistor 2SK351 / K351 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability .

2SK3510 : The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3510 TO-220AB FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z TO-263 TO-220SMDNote Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 75 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±83 ±332 A A Total Power Dissipatio.

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