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2SK615 Datasheet PDF


Part Number 2SK615
Manufacturer Panasonic Semiconductor
Title N-Channel MOSFET
Description Silicon MOS FETs (Small Signal) 2SK615 Silicon N-Channel MOS FET For switching unit: mm s Features q Low ON-resistance q High-speed switching q ...
Features q Low ON-resistance q High-speed switching q Allowing to be driven directly by CMOS and TTL q M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.5 0.4 6.9±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 2.5±0.1 1.0 1.0 1.0±0.1 R ...

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Datasheet 2SK615 PDF File








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2SK614 : Silicon MOS FETs (Small Signal) 2SK614 Silicon N-Channel MOS FET For switching unit: mm 5.0±0.2 5.1±0.2 4.0±0.2 s Features q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL 13.5±0.5 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0.5 ±1 750 150 −55 to +150 Unit V V A 0.45 –0.1 +0.2 0.45 –0.1 +0.2 1.27 1.27 1 2 3 2.54±0.15 A mW °C °C s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leak.

2SK614 : Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm I Features 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0.5 ±1 750 150 −55 to +150 Unit V V A A mW °C °C 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 5.1±0.2 0.45+0.15 –0.1 2.5+0.6 –0.2 1: Source 2: Drain 3: Gate JEDEC: TO-92 EIAJ: SC-43 TO-92-A1 Package I Ele.

2SK615 : Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.0±0.2 G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 6.9±0.1 (0.4) 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.4±0.2 (1.5) (1.5) R 0.9 R 0.7 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature * Symbol VDS VGSO ID IDP PD * Tch Tstg Ratings 80 20 ±0.5 ±1 1 150 −55 to +150 Unit V .

2SK616 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 V ±20 V 22 A 125 W 150 ℃ -55~150 ℃ 2SK616 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK616 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=.

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