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FDD6680 Datasheet PDF


Part Number FDD6680
Manufacturer Fairchild Semiconductor
Title 30V N-Channel PowerTrench MOSFET
Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the o...
Features
• 46 A, 30 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely low RDS(ON) Applications
• DC/DC converter
• Motor Drives D D G S I-PAK (TO-251AA) G D S G D-PAK TO-252 (TO-252) S Absolute Maxim...

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Datasheet FDD6680 PDF File








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FDD6680A : This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • • • 56 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.0130 Ω @ VGS = 4.5 V. Low gate charge ( 23nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications • • DC/DC converter Motor drives • D D G S TO-252 S TA=25oC unless otherwise noted G Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Parameter Ratings 30 ±20 (Note 1) (Note 1a) Units.

FDD6680S : The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode. Features • 55 A, 30 V RDS(ON) = 11 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (17nC typical) • High performance trench technology for extreme.

FDD6685 : This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –40 A, –30 V. RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 30 mΩ @ VGS = –4.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Qualified to AEC Q101 D G S G S TO-252 D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed,.

FDD6685 : .

FDD6688 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Applications • DC/DC converter • Motor Drives Features • 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.5 V • Low gate charge • Fast switching • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbo l VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Conti.

FDD6688S : The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6688S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Applications • DC/DC converter • Motor Drives Features • 88 A, 30 V. RDS(ON) = 5.1 mΩ @ VGS = 10 V RDS(ON) = 6.3 mΩ @ VGS = 4.5 V • Low gate charge (31 nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Para.




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