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FDS4435A

Part Number FDS4435A
Manufacturer Fairchild Semiconductor
Title P-Channel MOSFET
Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to mi...
Features • • • • -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V RDS(ON) = 0.025 W @ VGS = -4.5 V Low gate charge (21nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symb...

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FDS4435 : This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power management • Load switch • Battery protection Features • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V • Low gate charge (17nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source .

FDS4435BZ : This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D D D Pin 1 SO-8 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage .

FDS4435BZ : This P−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max RDS(on) = 20 mW at VGS = −10 V, ID = −8.8 A • Max RDS(on) = 35 mW at VGS = −4.5 V, ID = −6.7 A • Extended VGSS Range (−25 V) for Battery Applications • HBM ESD Protection Level of ±3.8 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • This Device is Pb−Free and RoHS Compliant Specifications MAXIMUM RATINGS .

FDS4435BZ-F085 : This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D D D Pin 1 SO-8 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Single Pulse Avalanche Energy TA = 25°C TA = 25°C Operating and Storage Junction Temperature Range Thermal C.

FDS4435BZ_F085 : This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D D D Pin 1 SO-8 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Single Pulse Avalanche Energy TA = 25°C TA = 25°C Operating and Storage Junction Temperature Range Th.




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