FQP10N60C mosfet equivalent, 600v n-channel mosfet.
* 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
* Low Gate Charge (Typ. 44 nC)
* Low Crss (Typ. 18 pF)
* 100% Avalanche Tested
D
GDS
.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switc.
Image gallery
TAGS
Manufacturer
Related datasheet