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FQP10N60C

Fairchild Semiconductor
Part Number FQP10N60C
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5...
Datasheet PDF File FQP10N60C PDF File

FQP10N60C
FQP10N60C

Overview
FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.
5 A, 730 mΩ Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features • 9.
5 A, 600 V, RDS(on) = 730 mΩ (Max.
) @ VGS = 10 V, ID = 4.
75 A • Low Gate Charge (Typ.
44 nC) • Low Crss (Typ.
18 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Dr...


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