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FQP10N60C Datasheet, Fairchild Semiconductor

FQP10N60C Datasheet, Fairchild Semiconductor

FQP10N60C

datasheet Download (Size : 1.30MB)

FQP10N60C Datasheet

FQP10N60C mosfet equivalent, 600v n-channel mosfet.

FQP10N60C

datasheet Download (Size : 1.30MB)

FQP10N60C Datasheet

Features and benefits


* 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
* Low Gate Charge (Typ. 44 nC)
* Low Crss (Typ. 18 pF)
* 100% Avalanche Tested D GDS .

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switc.

Image gallery

FQP10N60C Page 1 FQP10N60C Page 2 FQP10N60C Page 3

TAGS

FQP10N60C
600V
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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