HY29LV160TF-70I Datasheet

HY29LV160TF-70I 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory

The HY29LV160 is a 16 Mbit, 3 volt-only, CMOS Flash memory organized as 2,097,152 (2M) bytes or 1,048,576 (1M) words that is available in 48pin TSOP and 48-ball FBGA packages. Wordwide data (x16) appears on DQ[15:0] and bytewide (x8) data appears on DQ[7:0]. The HY29LV160 can be programmed and erase.

Features

n Single Power Supply Operation
  – Read, program and erase operations from 2.7 to 3.6 volts
  – Ideal for battery-powered applications High Performance
  – 70, 80, 90 and 120 ns access time versions Ultra-low Power Consumption (Typical Values At 5 Mhz)
  – Automatic sleep mode current: 1 µA
  – Standby mode current: 1 µA
  – Read current: 9 mA
  – Program/erase current: 20 mA Flexible Sector Architecture:
  – One 16 KB, two 8 KB, one 32 KB and thirty-one 64 KB sectors in byte mode
  – One 8 KW, two 4 KW, one 16 KW and thirty-one 32 KW sectors in word mode
  – Top or bottom boot block configurations available Se.