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IRFE130

Seme LAB

N-Channel Power MOSFET

IRFE130 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9....


IRFE130

Seme LAB


Octopart Stock #: O-284306

Findchips Stock #: 284306-F

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Description
IRFE130 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 VDSS ID(cont) RDS(on) FEATURES 100V 7.44A 0.207Ω 7 6 5 4 3 1.65 (0.065) 1.40 (0.05
More View 5) 0.33 (0.013) Rad. 0.08 (0.003) • SURFACE MOUNT • SMALL FOORPRINT • HERMETICALLY SEALED • DYNAMIC dv/dt RATING 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. LCC4 MOSFET GATE DRAIN SOURCE • AVALANCHE ENERGY RATING PINS 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 TRANSISTOR BASE COLLECTOR EMITTER • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec). 2 ±20V (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) 7.4A 4.7A 30A 22W 0.17W/°C 75mJ 5.5V/ns -55 to +150°C 300°C Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = 50V , L ≥ 570µH , RG = 25Ω , Peak IL = 14A , Starting TJ = 25°C 3) @ ISD ≤ 14A , di/dt ≤ 140A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk 10/98 IRFE130 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 4.7A VGS = 10V ID = 7.4A VDS = VGS ID = 250mA VDS ≥ 15V IDS = 4.7A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 7.4A VDS = 0.5BVDSS VDD = 50V ID = 7.4A RG = 7.5Ω Min. 100 Typ. Max. Unit V 0.10 0.18 0.207 4 25 250 100 –100 650 240 44 12.8 1.0 3.8 28.5 6.3 16.6 30 75 40 45 7.4 30 1.5 300 3.0 Negligible 1.8 4.3 5.8 19 V / °C Ω V S (É) µA nA 2 3 pF nC ns SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS






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