TIP33B Datasheet

TIP33B COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP33B/D Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ.

Features

ÎÎ ÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP33B TIP34B 80 V 80 V TIP33C TIP34C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc Collector
  –Emitter Voltage Collector
  –Base Voltage Emitter
  –Base Voltage 5.0 10 15 Collector Current — Continuous Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C 3.0 PD 80 0.64 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg
  – 65 to + 150
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• 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V Excellent dc Gain — hFE = 40 Typ @ 3.0 A High Current Gain Bandwidth Product — hfe = 3..