The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2. ∗1 MOCVD: Metal Organic Chemical Vapor Deposition ∗2 QW-SCH: Quant.
• High power Recommended optical power output: Po = 0.5W
• Low operating current: Iop = 0.75A (Po = 0.5W) Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tc = 25°C)
• Optical power output Po 0.55
• Reverse voltage VR LD 2 PD 15
• Operating temperature (Tc) Topr
–10 to +30
• Storage temperature Tstg
–40 to +85 Pin Configuration
W V V °C °C
2
1
3 1. LD cathode 2. PD anode 3. COMMON Bottom View
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