DatasheetsPDF.com

RM50HG-12S

Mitsubishi Electric Semiconductor

HIGH SPEED SWITCHING USE NON-INSULATED TYPE

MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE B F D G - DIA. K A ...



RM50HG-12S

Mitsubishi Electric Semiconductor


Octopart Stock #: O-344991

Findchips Stock #: 344991-F

Web ViewView RM50HG-12S Datasheet

File DownloadDownload RM50HG-12S PDF File







Description
MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE B F D G - DIA. K A L J 1 2 3 M E E N C H Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: ٗ Non-Isolated Package ٗ Planar Chips ٗ trr = 200ns Max. Applications: ٗ Snubber Circuits 1 3 2 4 Ordering Information: Example: Select the complete part number from the table below -i.e. RM50HG-12S is a 600V, 50 Ampere Super Fast Recovery Single Diode Module. Current Rating Amperes 50 Voltage Volts (x 50) 12 Outline Drawing and Circuit Diagram Type RM Dimension A B C D E F G Inches 1.102±0.02 0.81 Max. 0.79 Min. 0.24±0.008 0.214±0.012 0.20±0.012 Millimeters 26.0±0.5 20.5 Max. 20.0 Min. 6.0±0.2 5.45±0.3 5.0±0.3 Dimension H J K L M N Inches 0.12±0.012 0.10±0.012 0.10 0.08±0.012 0.04±0.008 0.02±0.008 Millimeters 3.0±0.3 2.5±0.3 2.5 2.0±0.3 1.0±0.2 0.6±0.2 0.214±0.012 Dia. Dia. 3.2±0.2 Sep.1998 MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Peak Reverse Blocking Voltage (Repetitive) Peak Reverse Blocking Voltage (Non-Repetitive) DC Reverse Blocking Voltage DC Current, TC = 80°C (Resistive Load) Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) Storage Temperature Operating Temperature Maximum Mounting Torque M3 Mounting Screw Module Weight (Typical) Symbol VRRM VRSM VR(DC) I...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)