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RFM12N10


Part Number RFM12N10
Manufacturer Intersil Corporation
Title 12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs
Description RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ /Title (RFM12 These are N-Channel enhancemen...
Features
• 12A, 80V and 100V
• rDS(ON) = 0.200Ω
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedure...

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Datasheet RFM12N10 PDF File








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RFM12N18 : These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09293. BRAND RFM12N18 RFM12N20 RFP12N18 RFP12N20 G September 1998 Features • 12A, 180V and 200V • rDS(ON) = 0.250Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel .




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