DatasheetsPDF.com

RHRG3060 Datasheet PDF


Part Number RHRG3060
Manufacturer Fairchild Semiconductor
Title Hyperfast Diode
Description The RHRG3040, RHRG3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon ...
Features
• Hyperfast Recovery trr = 45 ns (@ IF = 30 A)
• Max Forward Voltage, VF = 2.1 V (@ TC = 25°C)
• 400 V, 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose Packaging JEDEC STYLE...

File Size 1.59MB
Datasheet RHRG3060 PDF File








Similar Ai Datasheet

RHRG3060 : The RHRG3040, RHRG3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • Hyperfast Recovery trr = 45 ns (@ IF = 30 A) • Max Forward Voltage, VF = 2.1 V (@ TC = 25°C) • 400 V, 600 V Reverse Voltage and High Reliability •.

RHRG3060 : Ultra fast Rectifier INCHANGE Semiconductor RHRG3060 FEATURES ·With TO-247 packaging ·High performance fast recovery diode ·Low loss and soft recovery ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current @Tc=120℃ Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- wave, single phase, 60Hz) PD Max Power Dissipation TJ Junction .

RHRG3060 : only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com.

RHRG3060-F085 : The RHRG3060−F085 is a hyperfast diode with soft recovery characteristics (trr 45 ns). It has half the recovery time of ultrafast diode and is of silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Features • High Speed Switching (trr = 45 ns(Typ.) @ IF = 30 A) • Low Forward Voltage (VF = 1.64 V(Typ.) @ IF = 30 A) • A.

RHRG3060CC : Ultra fast Rectifier FEATURES ·With TO-247 packaging ·High junction temperature capability ·Low forward voltage ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current @Tc=110℃ VALUE UNI T 600 V 30 A IFSM RMS Forward Current 70 A Nonrepetitive Peak Surge Current IFSM (10ms single half sine-wave superimposed on.

RHRG3060CC : The RHRG3040CC, RHRG3060CC is a hyperfast dual diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Ordering Information PART NUMBER PACKAGE BRAND RHRG3040CC TO-247 RHRG3040C RHRG3060CC TO-247 RHRG3060C NOTE: When ordering, use the entire.

RHRG3060CC : only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com.

RHRG3060_F085 : RHRG3060_F085 30A, 600V Hyperfast Rectifier RHRG3060_F085 30A, 600V Hyperfast Rectifier July 2014 Features • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) • Low Forward Voltage( VF=1.64V(Typ.) @ IF=30A ) • Avalanche Energy Rated • AEC-Q101 Qualified Applications • Switching Power Supply • Power Switching Circuits • Automotive and General Purpose Max Ratings (600V, 30A) The RHRG3060_F085 is an Hyperfast™ diode with soft recovery characteristics (trr 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of autom.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)