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QL4016-4PLI


Part Number QL4016-4PLI
Manufacturer ETC
Title 16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM
Description QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High...
Features up to 16 simultaneous inputs and five outputs within a cell that can be fragmented into five independent cells. Each cell has a fanin of 29 including register and control lines (see Figure 3). WDATA RAM Module (1,152 bits) RDATA WADDR RADDR RAM Module (1,152 bits) WDATA RDATA Figure 2: QuickR...

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QL4016-4PLC : QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Performance & High Density • 16,000 Usable PLD Gates with 118 I/Os • 300 MHz 16-bit Counters, 400 MHz Advanced I/O Capabilities • Interfaces with both 3.3 V and 5.0 V devices • PCI compliant with 3.3 V and 5.0 V busses Datapaths, 160+ MHz FIFOs • 0.35 µm four-layer metal non-volatile CMOS process for smallest die sizes for -1/-2/-3/-4 speed grades • Full JTAG boundary scan • I/O Cells with individually controlled Registered Input Path and Output Enables High Speed Embedded SRAM • 10 dual-port RAM modules, organized in user-configurable 1,152 .

QL4016-4PLM : QL4016 QuickRAM Data Sheet • • • • • • 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM Device Highlights High Performance & High Density • 16,000 Usable PLD Gates with 118 I/Os • 300 MHz 16-bit Counters, 400 MHz Advanced I/O Capabilities • Interfaces with both 3.3 V and 5.0 V devices • PCI compliant with 3.3 V and 5.0 V busses Datapaths, 160+ MHz FIFOs • 0.35 µm four-layer metal non-volatile CMOS process for smallest die sizes for -1/-2/-3/-4 speed grades • Full JTAG boundary scan • I/O Cells with individually controlled Registered Input Path and Output Enables High Speed Embedded SRAM • 10 dual-port RAM modules, organized in user-configurable 1,152 .




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