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PBYL2025

NXP

Rectifier diodes Schottky barrier

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast...


NXP

PBYL2025

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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance PBYL2025 series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V k 1 a 2 IF(AV) = 20 A VF ≤ 0.43 V GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2025 series is supplied in the SOD59 (TO220AC) conventional leaded package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL20 Tmb ≤ 120 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C square wave; δ = 0.5; Tmb ≤ 131 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 20 20 20 20 20 40 180 200 2 150 175 MAX. 25 25 25 25 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg March 1998 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERM...




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