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PBYR745D

NXP

Rectifier diodes Schottky barrier

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast...


PBYR745D

NXP


Octopart Stock #: O-35750

Findchips Stock #: 35750-F

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Description
Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR745B, PBYR745D series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V k tab a 3 IF(AV) = 7.5 A VF ≤ 0.57 V GENERAL DESCRIPTIO
More View N Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR745B series is supplied in the SOT404 surface mounting package. The PBYR745D series is supplied in the SOT428 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION no connection cathode1 anode cathode SOT404 tab SOT428 tab 2 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR7 PBYR7 VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Tmb ≤ 114 ˚C square wave; δ = 0.5; Tmb ≤ 136 ˚C square wave; δ = 0.5; Tmb ≤ 136 ˚C t = 10 ms PBYR7..B t = 8.3 ms t = 10 ms PBYR7..D t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 40B 40D 40 40 40 7.5 15 135 150 100 110 1 150 175 MAX. 45B 45D 45 45 45 UNIT V V V A A A A A A A ˚C ˚C IRRM Tj Tstg Peak repetitive reverse surge current Operating junction temperature Storage temperature 1. It is not possible to make connection to pin 2 of the SOT404 or SOT428 package. July 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS PBYR745B, PBYR745D series MIN. - TYP. MAX. UNIT 50 3 K/W K/W pcb mounted, minimum footprint, FR4 board - ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 7.5 A; Tj = 125˚C IF = 15 A; Tj = 125˚C IF = 15 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.45 0.65 0.64 0.13 17 270 0.57 0.72 0.84 1 22 V V V mA mA pF July 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR745B, PBYR745D series 8 7 6 5 Forward dissipation, PF (W) Vo = 0.42 V Rs = 0.02 Ohms PBYR745 Tmb(max) (C) D = 1.0 126 129 100 Reverse current, IR (mA) PBYR745 125 C 0.5 0.2 132 135 10 100 C 1 75 C 50 C 0.1 4 3 0.1 I tp D= tp T t 138 141 144 147 150 12 2 1 0 0 2 T 0.01 0 Tj = 25 C 25 Reverse voltage, VR (V)






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