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PTB20007


Part Number PTB20007
Manufacturer Ericsson
Title 30 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at ...
Features age Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 10 175 1.0
  –40 to +150 1.0 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20007 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Brea...

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PTB20003 : The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • Specified 25 Volts 4 Watts, 915–960 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 12 10 8 6 4 2 0 0.00 Output Power (Watts) 200 03 LOT COD E VCC = 25 V ICQ = 50 mA f = 960 MHz 0.15 0.30 0.45 0.60 0.75 .

PTB20004 : The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 50 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 50 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 60 Output Power (Watts) 50 40 30 20 10 0 0 2 4 6 8 10 200 04 LOT CO DE VCC = 25 V ICQ = 200 mA f = 900 MHz Input Power (Watts) Package .

PTB20005 : The 20005 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 15 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 Output Power (Watts) 25 20 15 10 5 0 0.0 VCC = 25 V ICQ = 100 mA f = 900 MHz 200 05 LOT COD E 0.4 0.8 1.2 1.6 2.0 Input Power (W.

PTB20006 : The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 4 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 12 Output Power (Watts) 10 8 6 4 2 0 0.00 200 06 LOT COD E VCC = 25 V ICQ = 50 A f = 900 MHz 0.15 0.30 0.45 0.60 0.75 Input Power (Watts) .

PTB20008 : The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • 10 Watts, 935–960 MHz Class AB Characteristics 50% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 15.0 Output Power (Watts) 12.5 10.0 7.5 5.0 2.5 0.0 0.2 VCC = 24 V ICQ = 100 mA f = 960 MHz 200 08 LOT COD E 0.4 0.6 0.8 1.0 1.2 Input Power (Watts) Package 20201 .

PTB20009 : The 20009 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 2.5 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 2.5 Watts, 935–960 MHz Class AB Characteristics 50% Collector Efficiency at 2.5 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 6 Output Power (Watts) 5 4 3 2 1 0 0.00 VCC = 24 V ICQ = 50 mA f = 960 MHz 200 09 LOT COD E 0.15 0.30 0.45 0.60 0.75 Input Power.




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