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PTB20190


Part Number PTB20190
Manufacturer Ericsson
Title 175 Watts/ 470-806 MHz Digital Television Power Transistor
Description The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Ra...
Features uency (MHz) Package 20224 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TS...

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PTB20191 : The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • Class AB Characteristics 26 Volt, 1.9 GHz Characterization - Output Power = 12 W(CW), 15 W(PEP) Internal Input Matching Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 25 Output Power (Watts) 20 15 10 201 91 LOT COD E VCC = 26 V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ICQ = 100 mA f = 1.9 GHz Input .

PTB20193 : The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • 60 Watts, 1.8–1.9 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 70 Output Power (Watts) 60 50 40 30 20 10 1 3 5 7 9 11 13 201 93 LOT COD E VCC = 26 V ICQ = 150 mA f = 1.9 GHz Input Power (Watts) Package 20223 Maximum Ratings Parameter Collector-Emitter .

PTB20195 : The 20195 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • Class AB Characteristics 26 Volt, 900 MHz Characteristics - Output Power = 150 Watts Min - Collector Efficiency = 50% Min at 150 Watts - Gain = 9 dB Typ Gold Metallization Silicon Nitride Passivated • • Typical Output Power vs. Input Power 200 Output Power (Watts) 160 120 80 201 95 LOT COD E VCC = 26 V 40 0 0 5 10 15 20 25 30 .




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