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PZTA92 Datasheet PDF


Part Number PZTA92
Manufacturer NXP
Title PNP high-voltage transistor
Description PNP high-voltage transistor in a SOT223 plastic package. NPN complement: PZTA42. 1 Top view 2 3 MAM288 PZTA92 PINNING PIN 1 2, 4 3 base collector...
Features
• Low current (max. 100 mA)
• High voltage (max. 300 V). APPLICATIONS
• Video equipment
• Telephony
• Professional communication equipment. DESCRIPTION PNP high-voltage transistor in a SOT223 plastic package. NPN complement: PZTA42. 1 Top view 2 3 MAM288 PZTA92 PINNING PIN 1 2, 4 3 base collector e...

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PZTA92 : This device is designed for high-voltage driver applications. Sourced from process 76. C E SOT-23 Mark: 2D B Figure 1. MMBTA92 Device Package C SOT-223 E C B Figure 2. PZTA92 Device Package Ordering Information Part Number MMBTA92 PZTA92 Top Mark 2D A92 Package SOT-23 3L SOT-223 4L Packing Method Tape and Reel Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliabi.

PZTA92 : PZTA92 PNP Silicon High Voltage Transistor  High breakdown voltage  Low collector-emitter saturation voltage  Complementary type: PZTA42 (NPN) 4 3 2 1 VPS05163 Type PZTA92 Maximum Ratings Parameter Marking PZTA 92 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Value 300 300 5 500 100 1.5 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature mA W °C Thermal Resistance Junction - soldering point 1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resist.

PZTA92 : The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.  FEATURES * Collector-emitter voltage: VCEO=-300V (UTC PZTA92) VCEO=-200V (UTC PZTA93) * Complement to UTC PZTA42/43 * Collector power dissipation: PC(MAX)=1W  ORDERING INFORMATION Ordering Number PZTA92G-AA3-R PZTA93G-AA3-R Package SOT-223 SOT-223 Pin Assignment 123 BCE BCE Packing Tape Reel Tape Reel  MARKING PZTA92 PZTA93 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-006.E PZTA92/93 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Bas.

PZTA92 : High-Voltage PNP Transistor Surface Mount P b Lead(Pb)-Free COLLECTOR 2,4 1 BASE 3 EMITTER PZTA92 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 2 3 4 SOT-223 Maximum Ratings Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e Vo ltage Collector Current-Continuous Total Device Dis s ipation J unction and S torage, Tem perature Symbol VCEO VCB O VE B O IC PD T J,Ts tg Value -3 0 0 -3 0 0 -5 . 0 -5 0 0 2.0 -5 5 to +1 5 0 Unit Vdc Vdc Vdc m Adc W C Device Marking PZTA92 = A92 Electrical Characteristics (TA=25ºC Unless Otherwise noted) Characteristics Symbol Min Max Unit Off Characteristics Collector-E m itter B reakdown Voltage (IC=-1 . 0 m Adc, IB =0 ) C.

PZTA92 : The PZTA92 is designed for application as a viedo output to drive color CRT, or as a dialer circuit in electronics telephone. SOT-223 A9 2 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 ABSOLUTE MAXIMUM RATINGS Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current PD Total Power Dissipation TJ,Tstg Junction and Storage Temperature Value -300 -300 -5 -500 2 -55~+150 Units V V V mA W CO ELECTRICAL CHARACTERISTICS Tamb=25oC Parameter Collector-Base.

PZTA92 : SEMICONDUCTOR TECHNICAL DATA PZTA92 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES Complementary to PZTA42. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC * Tj -300 -300 -5.0 -500 500 1 150 Storage Temperature Tstg -55 150 * Package Mounted On FR-4 PCB 36 18 1.5mm. : mountina pad for the collector lead min.6cm2 UNIT V V V mA mA W A HL 2 EB J 13 FF 1 C 23 D 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER K G DIM MILLIMETERS A 6.5+_ 0.2 B 3.5+_ 0.2 C 1.8 M.

PZTA92 : SMD Type Transistors ■ Features ● High Voltage Driver Applications ● Complementary to PZTA42 PNP Transistors PZTA92 (KZTA92) SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 123 10 Unit:mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PC RθJA TJ Tstg Rating -300 -300 -5 -200 -500 1 125 150 -55 to 150 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Coll.

PZTA92T1 : ON Semiconductort High Voltage Transistor PNP Silicon COLLECTOR 2,4 PZTA92T1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol BASE 1 EMITTER 3 Value Unit SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature DEVICE MARKING VCEO VCBO VEBO IC PD Tstg TJ –300 –300 –5.0 –500 1.5 –65 to +150 150 Vdc Vdc Vdc mAdc Watts °C °C 4 1 2 3 CASE 318E–04, STYLE 1 TO–261AA P2D THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance from Junction to Ambient(1) RθJA .

PZTA92T1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZTA92T1/D High Voltage Transistor PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 PZTA92T1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value – 300 –300 – 5.0 – 500 1.5 – 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts °C °C SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT 4 1 2 3 CASE 318E–04, STYLE 1 TO–261AA DEVICE MARKING P2D THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Juncti.

PZTA92T1G : PZTA92T1G, NSVPZTA92T1G High Voltage Transistor PNP Silicon Features • Complement to PZTA42T1G • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Total Power Dissipation up to @ TA = 25°C (Note 1) VCEO VCBO VEBO IC PD −300 −300 −5.0 −500 1.5 Vdc Vdc Vdc mAdc W Storage Temperature Range Tstg − 65 to +150 °C Junction Temperature TJ 150 °C Stresses exceed.

PZTA93 : PNP Silicon High-Voltage Transistors PZTA 92 PZTA 93 High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: PZTA 42, PZTA 43 (NPN) q Type PZTA 92 PZTA 93 Marking PZTA 92 PZTA 93 Ordering Code (tape and reel) Q62702-Z2037 Q62702-Z2038 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS = 124 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol PZTA 92 VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg 300 300 Values PZTA 93 20.

PZTA93 : The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.  FEATURES * Collector-emitter voltage: VCEO=-300V (UTC PZTA92) VCEO=-200V (UTC PZTA93) * Complement to UTC PZTA42/43 * Collector power dissipation: PC(MAX)=1W  ORDERING INFORMATION Ordering Number PZTA92G-AA3-R PZTA93G-AA3-R Package SOT-223 SOT-223 Pin Assignment 123 BCE BCE Packing Tape Reel Tape Reel  MARKING PZTA92 PZTA93 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-006.E PZTA92/93 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Bas.

PZTA94 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA94 TRANSISTOR (PNP) FEATURES  High Voltage Driver Applications SOT-223 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -400 VCEO Collector-Emitter Voltage -400 VEBO Emitter-Base Voltage -5 IC Collector Current -200 PC Collector Power Dissipation 1 RθJA Thermal Resistance From Junction To Ambient 125 Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 Unit V V V mA W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min T.

PZTA94 : PZTA94 High-Voltage PNP Transistor Surface Mount P b Lead(Pb)-Free 1 BASE 3 EMITTER COLLECTOR 2,4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 4 1 2 3 SOT-223 Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Total Device Dissipation Junction and Storage, Temperature Symbol VCEO VCBO VEBO IC PD TJ,Tstg Value -400 -400 -6.0 -500 2.0 -55 to +150 Unit Vdc Vdc Vdc mAdc W C Device Marking PZTA94 = A94 Electrical Characteristics Off Characteristics (T A =25 C Unles s Otherwis e noted) Symbol Min Max Unit Characteristics Collector-Emitter Breakdown Voltage (IC=-1.0mAdc. IB=0) Collector-Base Breakdown Voltage (IC=-100 µAd.

PZTA94 : The PZTA94 is designed for application requires high voltage. SOT-223 Features *High Current Gain: IC=300mA at 25 C *High Voltage: VCEO=400V (min) at IC=1mA *Complementary With PZTA44 REF. A C D E I H C E o Date Code A9 4 Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 B Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Collector-Base Voltage Ta=25 C Parameter Value -400 -400 -6 -500 2 -55~+150 Units V V V mA W O o IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature o PD TJ,T.

PZTA94 : UNISONIC TECHNOLOGIES CO., LTD PZTA94 Preliminary PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD(MAX)=625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free PZTA94L-AA3-R PZTA94G-AA3-R Package SOT-223 Pin Assignment 123 BCE Packing Tape Reel www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R207-026.a PZTA94 Preliminary PNP SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -400 V Collect.




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