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BU2530AW Datasheet PDF

NXP
Part Number BU2530AW
Manufacturer NXP
Title Silicon Diffused Power Transistor
Description New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of larg...
Features O IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation ...

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BU2530AL : New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 Tmb ≤ 25 ˚C IC = 9.0 A; IB = 1.64 A ICsat = 9.0 A; IB(end) = 1.3 A TYP. 9 3.5 MAX. 1500 800 16 40 125 5.0 4.5 UNIT V V A A W V A µs PINNING - SOT430 PIN DESCRIPTION 1 ba.

BU2532AL : New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 7 1.4 MAX. 1500 800 16 40 125 5.0 1.8 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 7.0 A; IB = 1.17 A ICsat = 7.0 A; IB(end) = 1 A PINNING - SOT430 PIN 1 2 3 base collector emitter DESCRIPTIO.

BU2532AL : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 16 A ICM Collector Current-Peak 40 A IB Base Current- Continuous 10 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 125 W 150 ℃ Tstg Stora.

BU2532AW : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCES Collector- Emitter Voltage(VBE= 0) 1500 VCEO Collector-Emitter Voltage 800 UNIT V V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 16 A ICM Collector Current-Peak 40 A IB Base Current- Continuous 10 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 125 W 150 ℃ Tstg Storage.

BU2532AW : New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 7 1.4 MAX. 1500 800 16 40 125 5.0 1.8 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 7.0 A; IB = 1.17 A f = 82 kHz ICsat = 7.0 A; f = 82 kHz PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector D.




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