BU506F Datasheet

BU506F Silicon diffused power transistors

High-voltage, high-speed switching NPN power transistor in a SOT186 package. The BU506DF has an integrated efficiency diode. APPLICATIONS • Horizontal deflection circuits of colour television receivers • Line-operated switch-mode applications. PINNING PIN(1) 1 2 3 Note 1. All pins electrically isola.

Features

e load; see Fig.11 VBE = 0 open base CONDITIONS DESCRIPTION base collector emitter 1 2 3 MBC668 BU506F; BU506DF 2 2 1 MBB008 1 3 MBB077 3 a. BU506F. b. BU506DF. Front view Fig.1 Simplified outline (SOT186) and symbols. TYP. − − − 1.5 − − − − 0.7 MAX. 1500 700 1 2.2 3 5 8 20 − UNIT V V V V A A A W µs IC = 3 A; IB = 1.33 A; see Figs 7 and 8 IF = 3 A THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. 1997 Aug 14 1 PARAMETER CONDITION.