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BU508AF

Part Number BU508AF
Manufacturer Fairchild Semiconductor
Title NPN Triple Diffused Planar Silicon Transistor
Description BU508AF BU508AF TV Horizontal Output Applications 1 TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolut...
Features V Min. 700 5 1 10 Typ. Max. Units V V mA mA * Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 BU508AF Typical Characteristics 100 10000 VBE(sat)[mV], SATURATION VOLTAGE VCE = 5V IC = 2 IB hFE, DC CURRENT GAIN 10 1000 1 ...

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BU508A : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 125W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 125 W 150 ℃ Tstg Storage T.

BU508A : The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. 1 2 TO-3 TO-218 33 22 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO V EBO IC ICM Parameter Collector-Emit ter Volt age (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Ptot Vi so l Tstg Tj Total Dissipation at Tc = 25 oC Insulation W ithstand Voltage (RMS) from All Three Leads to Exernal Heatsink St orage Temperature Max. Operating Junction Temperature .

BU508A : ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 8 15 125 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c P.

BU508A : SYMBOL VALUE Collector -Base Voltage VCBO 1500 Collector -Emitter Voltage Emitter Base Voltage VCEO VEBO 700 5.0 Collector Current IC 5 Total Power Dissipation up to Tc=25 ºC Ptot 50 Junction Temperature Tj 150 Storage Temperature Tstg - 55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Cut off Current ICEO VCE=800V, IB=0 Collector Cut off Current Emitter Cut off Current ICBO IEBO VCB =800V, IE =0 VEB =4V, IC =0 Collector Emitter Voltage VCEO IC=50mA, IB =0 DC Current Gain Collector Emitter Saturation Voltage hFE VCE (sat) IC=1A, VCE=5V IC=5A, IB =1A MIN 160 8 UNIT V V V.

BU508A : .

BU508A : BU508A, 508D Horizontal Deflection Transistors High Voltage Switching Specifically designed for use in large screen colour deflection circuits. Features: • Collector-Emitter Sustaining Voltage VCEX = 1500V (Minimum) - BU508A, BU508D. • Glassivated Base-Collector Junction. Pin 1. Base 2. Collector 3. Emitter Dimensions Minimum Maximum A 20.63 22.38 B 15.38 16.20 C 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 12.84 G 4.20 4.50 H 1.82 2.46 I 2.92 3.23 J 0.89 1.53 K 5.26 5.66 L 18.50 21.50 M 4.68 5.36 N 2.40 2.80 O 3.25 3.65 P 0.55 0.70 Dimensions : Millimetres NPN BU508A BU508D 5 Ampere Power Transistors 1500 Volts 125 Watts TO-247(3P) Page 1 31/05/05 V1.0 BU50.

BU508A : With TO-3PN package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 3 2 1 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) ICM Collector current (Pulse) PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance ju.

BU508A : TO-3P NPN 。Silicon NPN transistor in a TO-3P Plastic Package. / Features 、。 High breakdown voltage, high speed, wide SOA. / Applications 、CRT 。 Horizontal deflection output for TV and CRT monitor. / Equivalent Circuit / Pinning PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BU508A Rev.D Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage(VEB=0) Emitter to Base Voltage Collector Current - Continuous Peak Collector Current Total Power Dissipation Storage Temperature Range Thermal Resistance Junct.

BU508A-2 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 125 W 150 ℃ Tstg Storage Temperature Rang.

BU508A-M : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 5A ICM Collector Current-Peak 16 A IB Base Current- Continuous 4A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6A 100 W 150 ℃ -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Produc.

BU508AF : High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.7 MAX. 1500 700 8 15 34 1.0 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16 kHz ICsat = 4.5 A; f = 16kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN C.

BU508AF : The BU508AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage. Order codes Part Number BU508AF Marking BU508AF Package ISOWATT218FX Packaging Tube March 2007 Rev 1 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings BU508AF 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB PTOT Vins Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Colle.

BU508AF : Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction - Case SYMBOL VCES VCEO VEBO IC ICM Ptot Tstg Tj VALUE 1500 700 5 8 15 34 60 - 65 to +150 150 UNIT V V V A W ºC ºC Rth (j-c) 2.08 ºC/W ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) . TEST CONDITIONS DESCRIPTION SYMBOL ICES VCE=VCES, VBE=0 Collector Cut off Current VCEO (sus)* IB =0, IC=100mA Collector Emitter Sustaining Voltage VEBO IE=10mA, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter.

BU508AF : Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction - Case SYMBOL VCES VCEO VEBO IC ICM Ptot Tstg Tj VALUE 1500 700 5 8 15 34 60 - 65 to +150 150 UNIT V V V A W ºC ºC Rth (j-c) 2.08 ºC/W ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) . TEST CONDITIONS DESCRIPTION SYMBOL ICES VCE=VCES, VBE=0 Collector Cut off Current VCEO (sus)* IB =0, IC=100mA Collector Emitter Sustaining Voltage VEBO IE=10mA, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter.

BU508AF : ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7.5 8 15 4 6 34 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Tran.

BU508AF : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 60 W 150 ℃ Tstg Storage Temperatur.




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