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BUJ106AX Datasheet PDF


Part Number BUJ106AX
Manufacturer NXP
Title Silicon Diffused Power Transistor
Description High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency elect...
Features S Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak v...

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BUJ105AB : High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V Tmb ≤ 25 ˚C IC = 4.0 A;IB = 0.8 A IC = 4.0 A; VCE = 5 V IC = 5 A; IB1 = 1 A TYP. 0.3 11 20.

BUJ105AD : High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features s Low thermal resistance s Fast switching 1.3 Applications s Electronic lighting ballast s Inverters s DC-to-DC converters s Motor control systems 1.4 Quick reference data s VCESM ≤ 700 V s Ptot ≤ 80 W s IC ≤ 8 A s hFEsat = 11 (typ) 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Description base collector emitter mounting base; connected to collector 2 1 3 1 3 sym056 Simplified outline [1] Symbol mb 2 SOT428 (D-PAK) [1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package. Philips Semiconductors BUJ105AD www.DataSheet4U.

BUJ105AD : High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits  Low thermal resistance  Fast switching 1.3 Applications  Electronic lighting ballast  Inverters  DC-to-DC converters  Motor control systems 1.4 Quick reference data  VCESM  700 V  Ptot  80 W  IC  8 A  hFEsat = 11 (typ) 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description base collector emitter mounting base; connected to collector Simplified outline mb [1] DPAK (SOT428) [1] It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package. Symbol 2 1 3 sym056 WeEn Semiconductors BUJ105AD Silicon d.

BUJ105AX : High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time CONDITIONS VBE = 0 V TYP. 0.3 11 20 MAX. 700 700 400 8 16 32 1.0 15 50 UNIT V V V A A W V ns Ths ≤ 25 ˚C IC = 4.0 A;IB = 0..




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