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S1WB60B Datasheet PDF

Shindengen Electric Mfg.Co.Ltd
Part Number S1WB60B
Manufacturer Shindengen Electric Mfg.Co.Ltd
Title General Purpose Rectifiers
Description SHINDENGEN General Purpose Rectifiers SMT Bridges S1WB(A)60B 600V 1A FEATURES •œ Small SMT •œ High IFSM •œ Applicable to Automatic Insertion APPL...
Features
•œ Small SMT
•œ High IFSM
•œ Applicable to Automatic Insertion APPLICATION
•œ Switching OUTLINE DIMENSIONS Case : 1W Case : 1W Unit : mm power supply
•œ Home Appliances, Office Equipment
•œ Telecommunication, Factory Automation RATINGS
•œAbsolute Maximum Ratings (If not specified Tl=25
•Ž) Item Sy...

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Datasheet PDF File S1WB60B PDF File


S1WB60B S1WB60B S1WB60B




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S1WB60 : SHINDENGEN General Purpose Rectifiers SMT Bridges S1WB(A)60 600V 1A FEATURES •œ Small SMT •œ High IFSM •œ Applicable to Automatic Insertion APPLICATION •œ Switching OUTLINE DIMENSIONS Case : 1W Case : 1W Unit : mm power supply •œ Home Appliances, Office Equipment •œ Telecommunication, Factory Automation RATINGS •œAbsolute Maximum Ratings (If not specified Tl=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40•`150 •Ž Operating Junction Temperature Tj 150 •Ž Maximum Reverse Voltage VRM 600 V Average Rectified Forward Current IO 50Hz sine wave, R-load, Ta=25•Ž 1 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25•Ž 30 A Current Squa.

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S1WB60B-7062 : S1WB(A)60B-7062 Bridge Diodes 600V, 1.0A Feature ・Small SMD (There is also DIP) ・High IFSM ・High Reliability ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): 1W Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tl=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -40 to 150 ℃ Junction temperature Tj -40 to 150 ℃ Repetitive peak reverse voltage VRRM 600 V 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=25℃ ※ 1 A Surge forward current 50Hz sine wave, Non-repetitive 1 cycle peak value, IFSM Tj=25℃ 50 A Current squared time I²t 1ms≦tp<10ms, Tj=25℃, per diode 16 A2s .

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