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VTB5051


Part Number VTB5051
Manufacturer PerkinElmer Optoelectronics
Title VTB Process Photodiodes
Description Planar silicon photodiode in a “flat” window, dual lead TO-5 package. Cathode is common to the case. These diodes have very high shunt resistance ...
Features K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 ±50 2.1 x 10-14 (Typ.) 1.8 x 10 13 (Typ.) .56 -8.0 3.0 .10 1100 85 Typ. 130 .12 490 -2.0 250 .23 Max. µA %/°C mV mV/°C pA GΩ %/°C nF A/W nm nm V Degrees W ⁄ Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Pag...

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VTB5051B : Planar silicon photodiode in a “flat” window, dual lead TO-5 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB5051B SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application .

VTB5051J : Planar silicon photodiode in a “flat” window, three lead TO-5 package. Chip is isolated from the case. The third lead allows the case to be grounded. These diodes have very high shunt resistance and have good blue response. CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB5051J SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Tempera.

VTB5051UV : Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting “flat” window. Chip is common to the case. These diodes have very high shunt resistance and have good blue response. CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB5051UV SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction C.

VTB5051UVJ : Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good blue response. CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB5051UVJ SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt.




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