DatasheetsPDF.com

PD57030

STMicroelectronics

RF POWER TRANSISTORS

PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ...


PD57030

STMicroelectronics


Octopart Stock #: O-38629

Findchips Stock #: 38629-F

Web ViewView PD57030 Datasheet

File DownloadDownload PD57030 PDF File




Description
PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57030 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF po
More View wer transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1GHz. PD57030 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57030’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING PD57030 XPD57030 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD57030S XPD57030S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature 0 Value 65 ±20 4 52.8 165 -65 to 175 Unit V V A W 0C 0C THERMAL DATA (TCASE = 70 0C) R th(j-c) May 2000 Junction-Case Thermal Resistance 1.8 0C/W 1/4 PD57030 PD57030S ELECTRICAL SPECIFICATION (TCASE = 25 0C) STATIC Symbol V(BR)DSS IDSS IGSS V GS(Q) VDS(ON) gFS C ISS COSS C RSS VGS = 0 V VGS = 0 V VGS = 20V VDS = 28V VGS = 10V VDS = 10V VGS = 0 V VGS = 0 V VGS = 0 V Parameter I DS = 10mA VDS = 28V VDS = 0V ID = 50mA ID = 3A ID = 3A VDS = 28V VDS = 28V VDS = 28V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 1.3 1.8 57 30 1.4 Min. 65 1 1 5.0 Typ. Max. Unit V µA µA V V mho pF pF pF DYNAMIC Symbol POUT GPS ηD LOAD Mismatch VDD = 28V VDD = 28V VDD = 28V f = 945 MHz f = 945 MHz f = 945 MHz Parameter I DQ = 50mA P OUT = 30W P OUT = 30W P OUT = 30W IDQ = 50mA IDQ = 50mA IDQ = 50mA Min. 30 13 50 10:1 14 60 Typ. Max. Unit W dB % VSWR VDD = 28V f = 945MHz ALL PHASE ANGLES PIN CONNECTION SOURCE GATE DRAIN SC15200 2/4 PD57030 PD57030S PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA 3/4 PD57030 PD57030S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are sub






Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)