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PDTA114TS

Part Number PDTA114TS
Manufacturer NXP
Title PNP resistor-equipped transistor
Description PNP Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP PDTA114TE SOT416...
Features I 100 mA output current capability I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place costs 1.3 Applications I Digital applications I Control of IC inputs I Cost-saving alternative to BC857 series in digital applications I Low current periphera...

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PDTA114T : PNP Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Package NXP PDTA114TE PDTA114TK PDTA114TM PDTA114TS[1] PDTA114TT PDTA114TU [1] Type number NPN complement JEITA SC-75 SC-59A SC-101 SC-43A SC-70 JEDEC TO-236 TO-92 TO-236AB PDTC114TE PDTC114TK PDTC114TM PDTC114TS PDTC114TT PDTC114TU SOT416 SOT346 SOT883 SOT54 SOT23 SOT323 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I 100 mA output current capability I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place costs 1.3 Applications I Digital applications I Control of IC inputs I Cost-saving alternative to BC.

PDTA114TE : PNP resistor-equipped transistor in an SC-75 plastic package. NPN complement: PDTC114TE. 1 3 2 MARKING TYPE NUMBER PDTA114TE MARKING CODE 11 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor Tamb ≤ 25 °C IC = −1 mA; VCE = −5 V CONDITIONS open base − − − − 200 7 MIN. − − − − − 10 TYP. MAX. −50 −100 −100 150 − 13 kΩ UNIT V mA mA mW 1998 Jul 23 2 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor LIMIT.

PDTA114TK : PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC114TK. 1 3 2 MARKING TYPE NUMBER PDTA114TK MARKING CODE 23 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor Tamb ≤ 25 °C IC = −1 mA; VCE = −5 V CONDITIONS open base − − − − 200 7 MIN. − − − − − 10 TYP. MAX. −50 −100 −100 250 − 13 kΩ UNIT V mA mA mW 1998 May 15 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING V.

PDTA114TM : PNP Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP PDTA114TE SOT416 PDTA114TK SOT346 PDTA114TM SOT883 PDTA114TS[1] SOT54 PDTA114TT SOT23 PDTA114TU SOT323 JEITA SC-75 SC-59A SC-101 SC-43A SC-70 JEDEC TO-236 TO-92 TO-236AB - [1] Also available in SOT54A and SOT54 variant packages (see Section 2). NPN complement PDTC114TE PDTC114TK PDTC114TM PDTC114TS PDTC114TT PDTC114TU 1.2 Features I 100 mA output current capability I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place costs 1.3 Applications I Digital applications I Control of IC inputs I Cost-savi.

PDTA114TMB : PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114TMB. 1.2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm 1.3 Applications  Low-current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications  Mobile applications 1.4 Quick reference data Table 1. Symbol VCEO IO R1 Quick reference data Parameter collector-emitter voltage.

PDTA114TT : PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC114TT. 1 3 2 MARKING TYPE NUMBER PDTA114TT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗11 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temp.

PDTA114TU : PNP resistor-equipped transistor in a SOT323 plastic package. NPN complement: PDTC114TU. 1 3 2 MARKING TYPE NUMBER PDTA114TU Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗23 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction tem.




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