DatasheetsPDF.com

PH2907 Datasheet PDF


Part Number PH2907
Manufacturer NXP
Title PNP switching transistor
Description PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PH2222A. PINNING PIN 1 2 3 emitter base collector PH2907A DESCRIPTIO...
Features
• High current (max. 600 mA)
• Low voltage (max. 60 V). APPLICATIONS
• Switching and linear amplification. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PH2222A. PINNING PIN 1 2 3 emitter base collector PH2907A DESCRIPTION 1 handbook, halfpage 2 3 3 2 1...

File Size 45.40KB
Datasheet PH2907 PDF File








Similar Ai Datasheet

PH20100S : www.DataSheet4U.com Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 100 V s Ptot ≤ 62.5 W s ID ≤ 34.3 A s RDSon ≤ 23 mΩ 2. Pinning information Table 1: Pin 1,2,3 4 mb Discrete Pinning Description source (s) gate (g) mounting base; connected to drain (d) mb Simplified outline Symbol d g mbb076 s 1 2 3 4 Top view SOT669 (LFPAK) Philips Semiconductors PH20100S N-channel TrenchMOS™ standard le.

PH201A : The PH201A is a GaAsP (Gallium Arsenide Phosphide) photo diode designed for use as a photo detector in electronic cameras. It features a wide active area, spectral response close to that of the human eye and a wide photo current range. Package Dimensions ¢6.0 (¢O.236) Features D Suitable for photo detector application in cameras D No filter is required, the spectral response matches that of the human eye D Low dark current Absolute Maximum Ratings TA = +25°C Reverse Voltage, VR Forward Current, IF Operating Temperature, TOPT Storage Temperature, TSTG 5.0V 1.0mA Clear Plastic Oark Ceramic * Soldering conditions are at 260"C or less within 10s at O.5mm or farther from the case. Package Dim.

PH2222A : NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: PH2907A. 1 handbook, halfpage 2 3 PH2222A PINNING PIN 1 2 3 emitter base collector DESCRIPTION 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 M.

PH2226-110M : PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant M/A-COM Products Released, 22 Feb 08 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 15 583 -65 to .

PH2226-50M : PH2226-50M Radar Pulsed Power Transistor 50 W, 2.2 - 2.6 GHz, 100 µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev. V1 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 63 3.0 6.0 159 -65 to +200 200 Units V V A W .

PH2323-1 : 3 .------ an AMP comDanv CW Power Transistor, 2.3 GHz Features l l l l l l l 1W PH2323-1 v2.00 NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package .lOCZ31C :2.s4.25, !t , I Absolute Maximum Ratings at 25°C 1 ,233 el.84) / lOD:.U:O :2.5L=.25) 1 UN-53 3TRiRWiSE NOTED, TDLERANCES ARE :HILLI,,ETERS t,,3,,M Electrical Characteristics at 25°C Test Fixture Impedances F(GHz) 2.30 zsw 12.5 - i26.0 z,,w 3.7+j10.4 CW Power Transistor, 1W PH2323-1 v2.00 RF Test Fixture 34N4UA JACKS 2 ?L4,ES MbiL3ZY TT5CY50A JUMPER SMACONNECTOR MIA-.

PH2323-14 : .

PH2323-3 : an AMP cormany CW Power Transistor, 2.3 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package 3.5W PH2323-3 v2.00 Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Electrical Characteristics Parameter Collector-Emitter Collector-Emitter Input Power Power Gain CollectorEfficiency Input Return Loss Load Mismatch Tolerance Breakdown Voltage Leakage Current at 25°C 1 Symbol 1 Min 1 Max 1 Units 1 Test Conditions BV,,, ICES PIN GP ‘Ic RL 60 1 1.0 1 V mA w I,=5 mA V,,=28 v V,,=28 8 30 0.48 - V, PoUT=3.0W, F=2.3 GH.

PH2323-5 : an AMP company CW Power Transistor, ,2.3 GHz Features l l l l l l l 5W PH2323-5 v2.00 NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package ’ . I 820 (20.83 .3:: d:1.271 1 573 K.z.48) : , I i I / Absolute Maximum Ratings at 25°C Electrical Characteristics at 25°C Test Fixture Impedances F(GHz) 2.30 1 TSiT F!XiURE IVWT / Zi= 3 ;TST FIXTURE - OUTP?IT CiRCUIT , LZg; Z,,(Q) 3.5 - j17.0 Z,,(Q) 4.0 + jo.3 $ !xlrl ZREU!T 5on $ L - CW Power Transistor, 5W PH2323-5 SMA CONNECTOR MAI-COM 2052-5636-02 2 PLACES IL4-SINK, ALUblVI!NLIM.

PH2369 : NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 emitter base collector PH2369 DESCRIPTION 1 handbook, halfpage 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 40 15 4.5 200 .

PH2369 : TO-92(R) NPN 。Silicon NPN transistor in a TO-92(R) Plastic Package.  / Features ,。 Low current, low voltage.  / Applications 。 High-speed switching. / Equivalent Circuit / Pinning 123 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 PH2369 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Peak Collector Current Peak Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IBM PC Tj Tstg Rating 40 15 .

PH2369 : Features — Power dissipation 1. COLLECTOR 2. BASE 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current –Continuous 0.2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ PH2369 TO-92 Transistor (NPN) TO-92 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off .

PH2369M : .

PH240320T-037-L09Q : New Drawing Page Design by - Bob PH240320T-037-L09Q Page2 Total: 25 Page SAMPLE Ver. 01 SPEC Edi.001 Contents 1. SPECIFICATIONS 1.1 Features 1.2 Mechanical Specifications 1.3 Absolute Maximum Ratings 1.4 DC Electrical Characteristics 1.5 Opti.

PH240320T-040-L12Q : New Drawing Modify LED Number Page Design by - Yangheng 6、8、11、 yangheng 12 PH240320T-040-L12Q Page2 Total: 26 Page SAMPLE Ver.01 SPEC Edi.002 Contents 1. SPECIFICATIONS 1.1 Features 1.2 Mech.

PH240320T-062-L06Q : .

PH240320T-063-L-Q : New Drawing New Sample Modify Optical Characteristics Modify LCM Packaging Specifications Modify Optical Characteristics Modify Drawing Page Design by - Yuan - Yuan 6 Yuan Append.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)