DatasheetsPDF.com

PHN1018

Part Number PHN1018
Manufacturer NXP
Title N-channel TrenchMOS transistor Logic level FET
Description N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. Application:...
Features
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low-profile surface mount package
• Logic level compatible PHN1018 SYMBOL d QUICK REFERENCE DATA VDSS = 25 V ID = 9.6 A g RDS(ON) ≤ 18 mΩ (VGS = 10 V) RDS(ON) ≤ 21 mΩ (VGS = 5 V) s GENERAL DESCRIPTION N-channel enhancement mode ...

File Size 88.85KB
Datasheet PHN1018 PDF File







Similar Datasheet

PHN1011 : N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard d.c. to d.c. converters. The PHN1011 is supplied in the SOT96-1 (SO8) surface mounting package PINNING PIN 1-3 4 5-8 DESCRIPTION SOT96-1 (SO8) 8 7 6 5 source gate drain pin 1 index 1 2 3 4 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage (DC) Gate-source v.

PHN1013 : source source source gate drain drain drain drain 1 Top view 4 MAM358 PHN1013 DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. handbook, halfpage 8 5 d g s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDSon Tj PARAMETER drain-source voltage drain current (DC) total power dissipation drain-source on-state resistance junction temperature VGS = 10 V CONDITIONS 30 10 2.5 13.5 150 MAX. V A W mΩ °C UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VDG VGS ID IDM Ptot Tstg Tj PARAMETER drain-source voltage drain.

PHN1015 : N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. Application:• High frequency computer motherboard d.c. to d.c. converters The PHN1015 is supplied in the SOT96-1 (SO8) surface mounting package. PINNING PIN 1-3 4 5-8 DESCRIPTION source gate drain SOT96-1 (SO8) 8 7 6 5 pin 1 index 1 2 3 4 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage (DC) Gate-source voltage (pulse peak value) Drain current (tp ≤ 10 s) Drain current (pulse peak value) Total powe.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)