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PHN210 Datasheet PDF


Part Number PHN210
Manufacturer NXP
Title Dual N-channel enhancement mode TrenchMOS transistor
Description Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Motor and relay drivers • ...
Features
• Dual device
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package PHN210 SYMBOL d1 d1 d2 d2 QUICK REFERENCE DATA VDS = 30 V ID = 3.4 A RDS(ON) ≤ 100 mΩ (VGS = 10 V) RDS(ON) ≤ 200 mΩ (VGS = 4.5 V) s1 g1 s2 g2 GENERAL DESCRIPTION Dual N-channel enhancement mod...

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