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PHP125N06T


Part Number PHP125N06T
Manufacturer NXP
Title TrenchMOS transistor Standard level FET
Description N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very ...
Features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP125N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Total ...

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PHP125N06LT : N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP125N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB125N06LT is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab gate drain 1 source drain DESCRIPTION SOT78 (TO220AB) tab SOT404 tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-sour.




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