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PHP20N06E Datasheet PDF


Part Number PHP20N06E
Manufacturer NXP
Title PowerMOS transistor
Description N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SM...
Features age temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 22 15 88 75 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance jun...

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Datasheet PHP20N06E PDF File








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PHP20N06 : N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D 2-PAK). 2. Features s Very low on-state resistance s Fast switching. 3. Applications s Switched mode power supplies s DC to DC converters. c 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) [1] mb d g s 2 MBK106 MBB076 1 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] 1. It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a t.

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PHP20N06T : Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ DC-to-DC convertors „ Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 3 and 1 Ptot total power dissipatio.

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