NE961R200 Datasheet

NE961R200 0.2 W X / Ku-BAND POWER GaAs MES FET

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for o.

Features

• High Output Power
• High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP.
• High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R200 NE961R200 NE960R275 75 Package 00 (CHIP) Supplying Form ESD protective envelope Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE960R200, NE960R275, NE961R200) Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to chan.