DatasheetsPDF.com

NDS9959

Fairchild

Dual N-Channel MOSFET

February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enha...



NDS9959

Fairchild


Octopart Stock #: O-474540

Findchips Stock #: 474540-F

Web ViewView NDS9959 Datasheet

File DownloadDownload NDS9959 PDF File







Description
February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. Features 2.0A, 50V. RDS(ON) = 0.3Ω @ VGS = 10V High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. _________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage T A = 25°C unless otherwise noted NDS9959 50 ± 20 (Note 1a) (Note 1a) Units V V A Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 70°C - Pulsed @ TA = 25°C ± 2.0 ± 1.6 ±8 2 PD Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 1.6 1 0.9 -55 to 150 °C TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junc...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)