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SE3E


Part Number SE3E
Manufacturer GOOD-ARK Electronics
Title SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
Description SE3A THRU SE3M SURFACE MOUNT HIGH EFFICIENCY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes Features For surface moun...
Features For surface mounted applications Low profile package Built-in strain relief Easy pick and place Ultrafast recovery times for high efficiency Plastic package has Underwriters Laboratory Flammability classification 94V-0 High temperature soldering: 260 /10 seconds at terminals Mechanical Data Case: S...

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SE301A : The SE301A is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on a TO-1S hermetically sealed header with a glass lens. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. The close wavelength match of this device to silicon sensors makes it ideally suited for all source-sense applications. Its low cost and volume producibility opens new areas of use anywhere an infrared source is desirable. Package Dimensions T0-18 Header with glass lens 4_ 5.35 tO~2~;r-O.2-- 1 :r0.161)1 0.2 1 II 0.016) ~4.6~"0.2_ (0.181) "'" I (0~:i~5M~axx) d -0 +-- (0.018 ~) - - 12.5 Mi 0.492 MI (Bottom View) ·Solderlng conditions are at 260°C or less within 5 s.

SE302A : The SE302A is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on a lead frame and molded in a clear plastic lens. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. The close wavelength match of this device to silicon sensors makes it ideally suited for all source-sense applications. Its low cost and volume producibility open new areas of use anywhere an infrared source is desirable. Package Dimensions 2.4 Max (0.094 Max) 22.0 Min (0.866 Min) 0.51 (0.02) Features D Low cost D High output power D Fast switching time D Long life, solid state reliability D Compact, rugged, lightweight D Spectrally matched to silicon sensors (Good com- patibil.

SE3035 : Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 5.5mΩ @ VGS=10  RDS(ON) = 9.5mΩ @ VGS=4.5 Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Rating 30 ±20 35 120 35 -55 to 150 Units V V A W ℃ ShangHai Sino-IC Microelectronic Co., Ltd. 1. SE3035 Electrical Characteristics (TJ=25℃ unles.

SE303A : The SE303A is a GaAs (gallium arsenide) infrared emitting diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. Package Dimensions Features o Economical o High output power o Wide half angle o Good linearity o Spectrally matched to silicon sensors o Long lead Applications o Light source for TV remote control o Light source for smoke detector o Optical encoders o Photo choppers, isolator Clear Plastic Resin 0.8~~~ (0.031) Part A: 1.04 (0.041) 3 ± 0.5 I~ Part B: 0.65 (0.025) 24 Min (0.945 Min) A: ¢1.2 Max (f,JO.047 Max) B: cpO.S Max (~0.031 Max) 2 ± 0.5 (0.079) (Bottom View) Package Dimensio.

SE3043NT5 : ϮϴϱŵEоŚĂŶŶĞůǁŝƚŚ^WƌŽƚĞĐƚŝŽŶͲϮϬs ^ϯϬϰϯEdϱ Features • Enables High Density PCB Manufacturing • 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 • Low Voltage Drive Makes this Device Ideal for Portable Equipment • Low Threshold Levels, VGS(TH) 1.3 V • Low Profile ( 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics • Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels Using the Same Basic Topology Applications • Interfacing, Switching • High Speed Switching • Cellular Phones, PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gat.

SE306 : The SE306 is a GaAs (Gallium Arsenide) infrared LED in a plastic molded package, and is very suitable for a detector of a photo interrupter. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. Package Dimensions Absolute Maximum Ratings TA = +25°C Power Dissipation, Po Forward Current, IF Reverse Voltage, VR Junction Temperature, TJ Storage Temperature, TSTG 100mW 50mA 5V 100·C -40·C to +1000C Package Dimensions in Millimeters (Inches) Electrical Characteristics TA = +25°C Parameters Limits Symbol Min Typ Max Unit Test Conditions Forward Voltage VF Reverse Current IR Capacitance CT 1.4 10 100 V IF = 10mA "A VR = 5V pF V = 0, f = 1.0MHz Peak Emiss.

SE307 : The SE307 is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. Package Dimensions Features D Economical D High radiant intensity D Narrow half angle D Good linearity D Spectrally matched to silicon sensors D Long lead Applications D Light source for TV remote control D Light source for smoke detector D Optical encoders D Photo choppers, isolators Black Plastic Resin str~$;:=---i 5,L~---,-; (OOO~I) 4.3 ± 0.5 -~-- 0.6 (0.024) Part A: 1.04 1(0.169) (0.041) Part B: 0.6 (0.024) 24 Min (0.945 Min) A: ~1.2 Max (¢0.047 Max) B: IbO.B Max (~0.031 Max.

SE308 : The SE308 is a GaAs (Gallium Arsenide) infrared LED in a plastic molded package, and is very suitable as a detector of a photo interrupter. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. Package Dimensions Absolute Maximum Ratings TA = +25°C Power Dissipation, PD Forward Current, 'F Reverse Voltage, VR Junction Temperature, TJ Operating Temperature, TOPT Storage Temperature, TSTG 100mW 50mA 5V TRANSPARENT EPOXY I' '1 2.5 (0.09.) t 2.• - 4 - (0.110) 1.:!r=i==f=;::=?J~ 0.76 '-~ J ~ I".030) - ,,~,'::., ®~ ®~ T -l=1-- (0.043) 16.5 ± 1.0 ) (OOO~.) - I- -,::, U 0.46 (0.01.) I , L 2.54 _I 1(0.100)1 ® f Package Dimensions in Millimeters (Inche.

SE3080A : Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A)  RDS(ON) = 4.5mΩ @ VGS=10V(SE3080K) Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resist.

SE3080G : This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application Features For a single MOSFET  VDS = 30V  RDS(ON) = 4.5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5*6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 30 ±20 80 170 83 306 -55 to 175 Units V V A W mJ ℃ Typ Max Units - 3 ℃.

SE3080K : Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage. This device is suitable for using as a load switch or in PWM applications.  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 4.5mΩ @ VGS=10V(SE3080A)  RDS(ON) = 4.5mΩ @ VGS=10V(SE3080K) Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resist.

SE3082G : Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Features For a single MOSFET  VDS = 30V  RDS(ON) = 5.0mΩ @ VGS=10V Pin configurations See Diagram below D1 D1 D2 S1D2 87 65 D1 D1 D2 D2 1 2 34 G1 S2 S2 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Thermal Resistance Symbol RθJC RθJA Parameter Junction to Case Junction to Ambient G1 S1 G2 S2 Symbol VDS VGS ID PD TJ Rating 30 ±20 80 170.

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SE30AFD : SE30AFB thru SE30AFJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES SlimSMA • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability Top View Bottom View DO-221AC • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A (TA = 125 °C) IR TJ max. 3.0 A 100 V to 600 V 40 A 0.86 V 10 μA 175 °C MECHANICAL DATA Case: DO-221AC (SlimSMA) Molding compound meets .

SE30AFG : SE30AFB thru SE30AFJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES SlimSMA • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability Top View Bottom View DO-221AC • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A (TA = 125 °C) IR TJ max. 3.0 A 100 V to 600 V 40 A 0.86 V 10 μA 175 °C MECHANICAL DATA Case: DO-221AC (SlimSMA) Molding compound meets .

SE30AFJ : SE30AFB thru SE30AFJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES SlimSMA • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability Top View Bottom View DO-221AC • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A (TA = 125 °C) IR TJ max. 3.0 A 100 V to 600 V 40 A 0.86 V 10 μA 175 °C MECHANICAL DATA Case: DO-221AC (SlimSMA) Molding compound meets .

SE30DT12 : www.vishay.com SE30DT12 Vishay General Semiconductor Surface-Mount High Voltage Rectifier eSMP® Series SMPD 2L K 1 2 Top View 1 2 Bottom View K LINKS TO ADDITIONAL RESOURCES EDA / CAD PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A (TJ = 150 °C) IR TJ max. Package 30 A 1200 V 300 A 1.01 V 10 μA 175 °C SMPD 2L Circuit configuration Single FEATURES • Creepage and clearance distance 3.7 mm typical Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of.




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