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MTP23P06 Datasheet PDF


Part Number MTP23P06
Manufacturer Motorola
Title Power Field Effect Transistor
Description ...
Features ...

File Size 349.55KB
Datasheet MTP23P06 PDF File








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MTP23P06V : MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP23P06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are cr.

MTP23P06V : MTP23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to.




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