MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC182/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC182,A,B BC183 BC184 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Devic.
V(BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 V(BR)EBO ICBO BC182 BC183 BC184 IEBO — — — — 0.2 0.2 0.2 — 15 15 15 15 nA 60 45 45 6.0 — — — — — — — — V nA 50 30 30 — — — — — — V V
Collector
– Base Breakdown Voltage (IC = 10 mA, IE = 0)
Emitter
– Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCB = 50 V, VBE = 0) (VCB = 30 V, VBE = 0) Emitter
–Base Leakage Current (VEB = 4.0 V, IC = 0)
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
BC182,A,B BC183 BC184
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Cont.
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