DatasheetsPDF.com

MPSW06 Datasheet PDF


Part Number MPSW06
Manufacturer Motorola
Title One Watt Amplifier Transistors
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW05/D One Watt Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER ...
Features .0 mAdc, IB = 0) Emitter
  – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW05 MPS...

File Size 138.34KB
Datasheet MPSW06 PDF File








Similar Ai Datasheet

MPSW01 : MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO Vdc MPSW01 30 MPSW01A 40 Collector −Base Voltage MPSW01 VCBO 40 Vdc MPSW01A 50 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 1000 1.0 8.0 Vdc mAdc W mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 W Derate above 25°C 20 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Ther.

MPSW01 : MPSW01 NPN General Purpose Amplifier MPSW01 NPN General Purpose Amplifier Features • This device is designed for general purpose medium power amplifiers • Sourced from process 37 Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage 30 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 40 5.0 IC Collector Current - Continuous 1.0 PD Total Device Dissipation Derate about 25°C 1.0 8.0 TJ , TSTG Operating Junction and Storage Temperature Range -55 to +150 * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Note : 1) These ratings are based on a maximum ju.

MPSW01 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW01/D One Watt High Current Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW01 MPSW01A* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage MPSW01 MPSW01A Collector – Base Voltage MPSW01 MPSW01A Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg Symbol VCEO 30 40 VCBO 40 50 5.0 1000 1.0 8.0 2.5 20 – 55 to +150 Vdc mAdc Watts mW/°C Watts mW/°C °C Vdc Value Unit Vdc 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) .

MPSW01A : MPSW01, MPSW01A One Watt High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO Vdc MPSW01 30 MPSW01A 40 Collector −Base Voltage MPSW01 VCBO 40 Vdc MPSW01A 50 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 1000 1.0 8.0 Vdc mAdc W mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 W Derate above 25°C 20 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Ther.

MPSW01A : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW01/D One Watt High Current Transistors NPN Silicon COLLECTOR 3 2 BASE MPSW01 MPSW01A* *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage MPSW01 MPSW01A VCEO 30 40 Vdc Collector – Base Voltage MPSW01 MPSW01A VCBO 40 50 Vdc Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 1000 1.0 8.0 Vdc mAdc Watts mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 Watts Derate above 25°C 20 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTI.

MPSW05 : MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW05 VCEO 60 Vdc MPSW06 80 Collector −Base Voltage MPSW05 VCBO MPSW06 60 80 Vdc Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 4.0 Vdc 500 mAdc 1.0 W 8.0 mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 W Derate above 25°C 20 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Res.

MPSW05 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW05/D One Watt Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW05 MPSW06* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSW05 60 60 4.0 500 1.0 8.0 2.5 20 – 55 to +150 MPSW06 80 80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Ch.

MPSW06 : MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW05 VCEO 60 Vdc MPSW06 80 Collector −Base Voltage MPSW05 VCBO MPSW06 60 80 Vdc Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 4.0 Vdc 500 mAdc 1.0 W 8.0 mW/°C Total Device Dissipation @ TC = 25°C PD 2.5 W Derate above 25°C 20 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Res.

MPSW06 : MPSW06 Discrete POWER & Signal Technologies MPSW06 C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. See MPSA06 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 80 80 4.0 500 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These rating.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)