STP4NA80FI Datasheet

STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIG.

Features

V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) 800 800 ± 30 4 2.5 16 o Value STP4NA80FI Unit V V V 2.5 1.6 16 45 0.36 2000 A A A W W/o C V o o w w w a D . (
•) Pulse width limited by safe operating area S a t t e he Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4U .c om 110 0.88  -65 to 150 150 C C February 1994 1/10 www.Dat.