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5082-3080 Datasheet PDF

Hewlett-Packard
Part Number 5082-3080
Manufacturer Hewlett-Packard
Title (5082-3xxx) PIN Diodes for RF Switching and Attenuating
Description Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matr...
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex fi...

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5082-3080 5082-3080 5082-3080




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5082-3001 : Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers, antenna switching matrices, digital phase shifters, and time multi­plex filters. The 5082-3188 is ­optimized for VHF/UHF bandswitching. Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance The RF resistance of a PIN diode is a function of the current flowing in the diode.These current controlled resistors are specified for use in control appli­cations such as variable RF attenuators, automatic gain control circuits, RF modulators, electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 0.41 (..

5082-3001 : Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variable RF attenuators, automatic gain control circuits, RF modulators, DataSheet4U.com electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. .

5082-3039 : Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers, antenna switching matrices, digital phase shifters, and time multi­plex filters. The 5082-3188 is ­optimized for VHF/UHF bandswitching. Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance The RF resistance of a PIN diode is a function of the current flowing in the diode.These current controlled resistors are specified for use in control appli­cations such as variable RF attenuators, automatic gain control circuits, RF modulators, electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 0.41 (..

5082-3039 : Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variable RF attenuators, automatic gain control circuits, RF modulators, DataSheet4U.com electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. .

5082-3077 : Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers, antenna switching matrices, digital phase shifters, and time multi­plex filters. The 5082-3188 is ­optimized for VHF/UHF bandswitching. Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance The RF resistance of a PIN diode is a function of the current flowing in the diode.These current controlled resistors are specified for use in control appli­cations such as variable RF attenuators, automatic gain control circuits, RF modulators, electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 0.41 (..

5082-3077 : Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variable RF attenuators, automatic gain control circuits, RF modulators, DataSheet4U.com electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. .

5082-3080 : The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I V PDISS TJ TSTG TSOLD 250 mA 100 V 250 mW @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 °C 260 °C for 5 sec. CHARACTERISTICS SYMBOL VR VF τ RS Ct RH RL IR = 10 µA TC = 25 °C TEST CONDITIONS IF = 100 mA IF = 50 mA IF = 100 mA VR = 50 V IF = 10 µA IF = 20 mA IR = 250 mA f = 100 MHz f = 1.0 MHz f =100 MHz f = 100 MHz MINIMUM TYPICAL MAXIMUM 100 1.0 1300 2.5 0.4 1000 8.0 UNITS V V µS Ω pF Ω Ω A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.

5082-3080 : The 1N5767 and the 1N5957 PIN diodes are based upon low capacitance PIN chips designed with long minority carrier lifetime, and thick intrinsic width. Thus operation as low as 1 MHz is possible with low distortion. Additionally, the low diode capacitance allows useful operation well into the microwave frequency range. The 1N5767 (5082-3080) is a general purpose low power PIN diode designed for Both switch and attenuator applications. The 1N5957 is primarily used as an attenuator PIN diode and is particularly suitable wherever current controlled, wide dynamic range resistance elements are required. The 1N5957 has also been characterized for the 75Ω attenuator, commonly employed in CATV syst.

5082-3080 : Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers, antenna switching matrices, digital phase shifters, and time multi­plex filters. The 5082-3188 is ­optimized for VHF/UHF bandswitching. Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance The RF resistance of a PIN diode is a function of the current flowing in the diode.These current controlled resistors are specified for use in control appli­cations such as variable RF attenuators, automatic gain control circuits, RF modulators, electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 0.41 (..

5082-3081 : The ASI 5082-3081 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I V PDISS TJ TSTG TSOLD 250 mA 100 V 250 mW @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 °C 260 °C for 5 sec. CHARACTERISTICS SYMBOL VR VF τ RS Ct RH RL IR = 10 µA TC = 25 °C TEST CONDITIONS IF = 100 mA IF = 50 mA IF = 100 mA VR = 50 V IF = 10 µA IF = 20 mA IR = 250 mA f = 100 MHz f = 1.0 MHz f =100 MHz f = 100 MHz MINIMUM TYPICAL MAXIMUM 100 1.0 2500 3.5 0.4 1500 8.0 UNITS V V nS Ω pF Ω Ω A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.

5082-3081 : Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variable RF attenuators, automatic gain control circuits, RF modulators, DataSheet4U.com electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. .

5082-3081 : Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers, antenna switching matrices, digital phase shifters, and time multi­plex filters. The 5082-3188 is ­optimized for VHF/UHF bandswitching. Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance The RF resistance of a PIN diode is a function of the current flowing in the diode.These current controlled resistors are specified for use in control appli­cations such as variable RF attenuators, automatic gain control circuits, RF modulators, electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 0.41 (..

5082-3088 : Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variable RF attenuators, automatic gain control circuits, RF modulators, DataSheet4U.com electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. .

5082-3170 : The ASI 5082-3170 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 to 18 GHz. PACKAGE STYLE M-50 FEATURES INCLUDE: • Direct Replacement for HP 5082-3170 • Isolation = 20 dB min. at 10 GHz • Hermetic Package MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC 250 mA 150 V 1.75 W @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 °C 72 °C/W Cathode ORDER CODE: ASI30217 NONE CHARACTERISTICS SYMBOL VBR VF τ IL IL VSWR IR = 10 µA IF = 100 mA IF = 50 mA IF = 0 mA IF = 100 mA IF = 0 mA TC = 25 °C TEST CONDITIONS MINIMUM 150 TYPICAL MAXIMUM 1.0 UNITS V V µS IR = 250 mA PIN = 0 dBm PIN = 0 dBm PIN = 0 dBm f = 10 GHz f = 10 GHz f = 10 GHz 20 400 0.5 1.5:1.

5082-3188 : Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers, antenna switching matrices, digital phase shifters, and time multi­plex filters. The 5082-3188 is ­optimized for VHF/UHF bandswitching. Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance The RF resistance of a PIN diode is a function of the current flowing in the diode.These current controlled resistors are specified for use in control appli­cations such as variable RF attenuators, automatic gain control circuits, RF modulators, electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 0.41 (..

5082-3188 : For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all families of devices. Data is initially compiled from reliability tests run prior to market introduction to demon- strate that a product meets design criteria. Additional tests are run periodically. The data on this sheet represents the latest review of accumulated test results. 400 350 300 Applications This information represents the capabilities of the generic device. Failure rates and MTTF values presented here are achievable with normal MIL-S-19500 TX level screening. This reliability screening is no longer available from Hewlett-Packard. The screening tests, ref.




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