DatasheetsPDF.com

IRLZ24NL


Part Number IRLZ24NL
Manufacturer International Rectifier
Title Power MOSFET
Description l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.06Ω G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced proce...
Features w internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ24NL) is available for lowprofile applications. DataShee D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC...

File Size 372.89KB
Datasheet IRLZ24NL PDF File








Similar Ai Datasheet

IRLZ24N : Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation DataSheet4U.com levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. DataShee TO-220AB Absolute Maximum .

IRLZ24N : isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ24N, IIRLZ24N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.06Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CH.

IRLZ24NLPBF : l l HEXFET® Power MOSFET D IRLZ24NSPbF IRLZ24NLPbF VDSS = 55V RDS(on) = 0.06Ω PD - 95584 G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount pa.

IRLZ24NPBF : www.DataSheet4U.com PD - 94998 IRLZ24NPbF • Lead-Free DataShee DataSheet4U.com www.irf.com 1 2/11/04 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com IRLZ24NPbF et4U.com DataShee DataSheet4U.com 2 www.irf.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com IRLZ24NPbF et4U.com DataShee DataSheet4U.com www.irf.com 3 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com IRLZ24NPbF et4U.com DataShee DataSheet4U.com 4 www.irf.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com IRLZ24NPbF et4U.com DataShee DataSheet4U.com www.irf.com 5 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com IRLZ24NPbF et4U.com DataShee DataShee.

IRLZ24NS : l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.06Ω G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high .

IRLZ24NS : isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 18 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-ca.

IRLZ24NSPBF : l l HEXFET® Power MOSFET D IRLZ24NSPbF IRLZ24NLPbF VDSS = 55V RDS(on) = 0.06Ω PD - 95584 G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount pa.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)