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MA2SD30

Part Number MA2SD30
Manufacturer Panasonic Semiconductor
Title Schottky Barrier Diodes
Description www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2SD30 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • Sm...
Features
• Small reverse current: IR 2 µA (at VR = 30 V)
• Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05 0.60+0.05
  –0.03 0.80+0.05
  –0.03 1 (0.60) 0.12+0.05
  –0.02 (0.80) (0.60) 0.01±0.01 5˚ 2 0.30±0.05
■ Absolute Maximum Ratings Ta = 25°C Paramete...

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Datasheet MA2SD30 PDF File







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MA2SD31 : www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2SD31 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • IF(AV) = 200 mA rectification is possible. • Low forward voltage: VF 0.47 V (at IF = 200 mA) 0.80±0.05 0.60+0.05 –0.03 0.80+0.05 –0.03 1 (0.60) 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 125 −55 to +125 Unit V V 5˚ 2 0.30±0.05 0+0 –0.05 0.01±0.01 mA mA A .

MA2SD32 : www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2SD32 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • IF(AV) = 200 mA rectification is possible. • Small reverse current: IR 5 µA (at VR = 30 V) 0.80±0.05 0.60+0.05 –0.03 0.80+0.05 –0.03 1 (0.60) 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 125 −55 to +125 Unit V V 5˚ 2 0.30±0.05 0+0 –0.05 0.01±0.01 mA mA A °C.




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