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BUL791 Datasheet PDF


Part Number BUL791
Manufacturer Bourns Electronic Solutions
Title NPN SILICON POWER TRANSISTOR
Description www.DataSheet4U.com BUL791 NPN SILICON POWER TRANSISTOR ● ● ● ● ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W hFE ...
Features for tp = 300 µs, duty cycle ≤ 2%. SYMBOL VCES VCBO V CEO VEBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 4 8 14 2.5 3.5 75 -65 to +150 -65 to +150 UNIT V V V V A A A A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to chang...

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Datasheet BUL791 PDF File








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BUL1102E : This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast. Figure 1. Internal schematic diagram C (2, TAB) (1) B E (3) Table 1. Device summary Marking BUL1102E BUL1102EFP Package TO-220 TO-220FP Packaging Tube Tube Order codes BUL1102E BUL1102E.

BUL1102E : ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Four lamp electronic ballsat for : 120v mains in push-pull configuration ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCES Collector-Emitter Voltage VBE= 0 1100 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THER.

BUL116D : The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collect.

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BUL1203 : The BUL1203E is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight h FE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-BaseVoltage (I E = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector .

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BUL1203E : ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage VBE= 0 1200 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL .

BUL123S : TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features ,。 High Voltage Capability High Speed Switching.  / Applications 、、。 High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. / Equivalent Circuit / Pinning 1 23 PIN1: Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 BUL123S Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Sy.

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BUL128 : ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-peak tp5ms 8 A IB Base Current-Continuous 2 A IBM Base Current-peak tp5ms PC Collector Power Dissipati.

BUL128D : The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting ABSOLUTE MAXIMUM RATINGS Parameter ol Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg Value Unit 700 V 400 V 9.0 V 4.0 A 2.0 A 70 W 150 .

BUL128D : ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-Peak (tp5 ms) IB Base current IBM Base current-Peak (tp5 ms) PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25℃ THERMAL CHARACTERISTICS SYMB.

BUL128D-B : The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1: Order Codes Part Number BUL128D-B Marking BUL128D-B Figure 1: Package 3 2 1 TO-220 Figure 2: Internal Schematic Diagram Package TO-220 Packaging Tube Table 2: Absolute Maximum Rat.

BUL128DB : ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for electronic ballasts for fluorescent lighting. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-peak tp5ms 8A IB Base Current-Continuous 2A IBM Base Current-peak tp5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYM.




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