DatasheetsPDF.com

IXTH3N120 Datasheet PDF


Part Number IXTH3N120
Manufacturer IXYS Corporation
Title Power MOSFET
Description High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N120 IXTP3N120 IXTH3N120 Symbol VDSS VDGR VGSS VG...
Features
 International Standard Packages
 High Voltage Package
 Fast Intrinsic Diode
 Avalanche Rated
 Molding Epoxies meet UL 94 V-0 Flammability Classification
 High Blocking Voltage Advantages
 Easy to Mount
 Space Savings
 High Power Density Applications
 High Voltage Power Supplies
 Capacito...

File Size 175.61KB
Datasheet IXTH3N120 PDF File








Similar Ai Datasheet

IXTH3N100P : PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 1000 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 6 3 200 10 125 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)