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UPD44324364


Part Number UPD44324364
Manufacturer NEC
Title (UPD44324xx4) 36M-BIT DDRII SRAM 4-WORD BURST OPERAT
Description The µPD44324084 is a 4,194,304-word by 8-bit, the µPD44324094 is a 4,194,304-word by 9-bit, the µPD44324184 is a 2,097,152-word by 18-bit and the ...
Features
• 1.8 ± 0.1 V power supply and HSTL I/O
• DLL circuitry for wide output data valid window and future frequency scaling
• Pipelined double data rate operation
• Common data input/output bus
• Four-tick burst for reduced address frequency
• Two input clocks (K and /K) for precise DDR timing at clock r...

File Size 368.75KB
Datasheet UPD44324364 PDF File








Similar Ai Datasheet

UPD44324362 : The µPD44324082 is a 4,194,304-word by 8-bit, the µPD44324092 is a 4,194,304-word by 9-bit, the µPD44324182 is a 2,097,152-word by 18-bit and the µPD44324362 is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The µPD44324082, µPD44324092, µPD44324182 and µPD44324362 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. .

UPD44324365 : The µPD44324085 is a 4,194,304-word by 8-bit, the µPD44324095 is a 4,194,304-word by 9-bit, the µPD44324185 is a 2,097,152-word by 18-bit and the µPD44324365 is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The µPD44324085, µPD44324095, µPD44324185 and µPD44324365 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and /K. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. .




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