DatasheetsPDF.com

STB200NF04L

ST Microelectronics
Part Number STB200NF04L
Manufacturer ST Microelectronics
Description N-CHANNEL STripFET II MOSFET
Published Jan 11, 2007
Detailed Description www.DataSheet4U.com STP200NF04L STB200NF04L - STB200NF04L-1 N-CHANNEL 40V - 3 mΩ - 120 A TO-220/D²PAK/I²PAK STripFET™ I...
Datasheet PDF File STB200NF04L PDF File

STB200NF04L
STB200NF04L


Overview
www.
DataSheet4U.
com STP200NF04L STB200NF04L - STB200NF04L-1 N-CHANNEL 40V - 3 mΩ - 120 A TO-220/D²PAK/I²PAK STripFET™ II MOSFET Table 1: General Features TYPE STB200NF04L STP200NF04L STB200NF04L-1 s s s Figure 1: Package RDS(on) 3.
5 mΩ 3.
8 mΩ 3.
8 mΩ ID 120 A 120 A 120 A 3 1 2 VDSS 40 V 40 V 40 V TYPICAL RDS(on) = 3mΩ 100% AVALANCHE TESTED LOW THERESHOLD DRIVE 3 1 TO-220 D²PAK DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and lesscritical alignement steps therefore a remarkable manufacturing reproducibility.
This new improved device has been specifically designed for Automotive applications.
APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED 3 12 I²PAK Figure 2: Internal Schematic Diagram Table 2: Order Codes PART NUMBER STP200NF04L STB200NF04L STB200NF04L-1 MARKING P200NF04L B200NF04L B200NF04L PACKAGE TO-220 D²PAK I²PAK PACKAGING TUBE TAPE & REEL TUBE Rev.
1 April 2005 1/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Table 3: Absolute Maximum ratings Symbol VDS VGDR VGS ID (**) ID IDM (2) PTOT dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS=20 KΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 40 40 ± 16 120 120 480 300 2 3.
6 1.
4 -55 to 175 Unit V V V A A A W W/°C V/ns J °C EAS (3) Tstg Tj (1)ISD ≤ 100 A, di/dt ≤ 240 A/µs, VDD ≤ 32 , Tj ≤ TJMAX (2) Pulse width limited by safe operating area.
(3) Starting Tj = 25°C, IAR = 50A, VDD = 30V (**) Current limited by Package Table 4: Thermal Data TO-220/I²PAK Rthj-case Rthj-pcb (*) Rthja Tl Thermal Resistance Junction-case Thermal Resistance J...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)