These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in n.
x 1.4 A, 30 V.
RDS(ON) = 110 m: @ VGS = 10 V RDS(ON) = 160 m: @ VGS = 4.5 V
x Low gate charge
x Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities
x High performance trench technology for extremely low RDS(ON)
D
D
S
SuperSOT TM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and S.
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